SONATS applies the following methods to measure residual stresses :
SONATS provides comprehensive expert examination of residual stress and analysis of metallic materials.
Residual stresses cause harmful deformation of parts during manufacture (distortion). They also have an effect on crack resistance: fatigue, stress corrosion, toughness. In addition to metallurgical and dimensional aspects, knowledge and control of residual stresses is therefore important to optimise processes and product quality.
25 years of experience in many industrial sectors in France and abroad, with more than 100,000 measurements made.
High-level knowledge and skills teams.
Rigour and quality of measurements and reports.
Explanations and advice for understanding and evaluating the results.
SONATS methods are applicable to all types of parts and materials, regardless of the distribution of residual stresses considered:
■ Evaluation of compression after shot peening steel, aluminium, titanium and Inconel
Applicable also for: rolling, peening, burnishing, carburising, nitriding, coating, thermal spray, etc.
■ Integrity of machined surfaces, surface stresses due to machining
■ Relationship between residual deformation and stresses (distortion)
■ Residual stresses in additive manufacturing
■ Welding residual stresses and effects of post-treatment
■ The effects of stress relieving or stabilisation heat treatment
Example of studies: Control of compression depth after shot peening, fatigue sample machining test, prediction of deformation after machining, qualification of a new machining centre for aerospace parts, study of distortions due to heat treatment, controls upon receipt of material, study of the influence of the filler metal on MIG-MAG welding residual stresses, residual stresses after friction stir welding, effect of intensity on the residual stresses in laser welding, effect of TIG dressing and straightening post treatment at the weld bead toe, effect of stress relief treatment, study of the sterilisation temperature, residual stresses on HVOF deposit, residual stresses on silicon wafers, effect of the substrate on the residual stresses of the deposit, etc.
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